2SK1530

The Toshiba 2SK1530 is a Silicon N-Channel MOS Type Field Effect Transistor. It is specifically designed for high power amplifier applications. Key electrical characteristics include a high breakdown voltage (V DSS) of 200V and a high forward transfer admittance (|Y fs|) of 5.0 S (typical). The device can handle a continuous drain current (ID) of up to 12A and has a maximum power dissipation (PD) of 150W at a case temperature of 25°C.

This transistor is complementary to the 2SJ201. It operates within a channel temperature range of up to 150°C and a storage temperature range of -55°C to 150°C. Electrical specifications include a drain cut-off current of 1.0 mA maximum and a gate leakage current of ±0.5 µA maximum. The drain-source saturation voltage (V DS(ON)) is typically 2.5V at 8A and 10V VGS, while the gate-source cut-off voltage (V GS(OFF)) ranges from 0.8V to 2.8V depending on classification.

Capacitance values include input capacitance (Ciss) of 900 pF typical, output capacitance (Coss) of 180 pF typical, and reverse transfer capacitance (Crss) of 100 pF typical, all measured at 1 MHz. The transistor is supplied in the 2-21F1B package, weighing approximately 9.75g. It is noted as an electrostatic sensitive device and requires careful handling.