| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The 2SK1518-E is an N-Channel MOSFET from Renesas designed for high-voltage switching applications. It features a drain-source breakdown voltage of 500V and a continuous drain current of 20A, making it suitable for power conversion and control circuits.
With a low on-resistance of 270mOhm at 10V gate drive, the device minimizes conduction losses. The input capacitance is 3050pF, enabling moderate switching speeds. The MOSFET is housed in a TO-3P through-hole package, providing robust mechanical mounting and thermal dissipation.
Key specifications include a maximum power dissipation of 120W and a junction temperature rating of 150°C. The gate-source voltage is rated at ±30V, offering flexibility in drive circuit design.
The maximum drain-source voltage (Vdss) is 500 V.
The continuous drain current is 20 A at Ta.
The maximum on-resistance is 270 mOhm at Id=10A and Vgs=10V.
The package is TO-3P (through-hole, TO-220-3 Full Pack).
The maximum junction temperature is 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate-source voltage is ±30 V.