| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK1489 is a Silicon N Channel MOS Type Field Effect Transistor, specifically designed for chopper regulator applications. This device features a low drain-source ON resistance of 0.8 Ω (typical) and a high forward transfer admittance of 6.0 S (typical), making it efficient for power switching.
Key electrical characteristics include a drain-source breakdown voltage of 1000 V and a gate threshold voltage ranging from 1.5 V to 3.5 V. The transistor also exhibits low leakage current, with a maximum I DSS of 300 µA at 800 V.
With a continuous drain current rating of 12 A and a pulse rating of 36 A, the 2SK1489 can handle significant current loads. It has a maximum power dissipation of 200 W at 25°C (Tc) and operates within a channel temperature range of -55°C to 150°C. The thermal resistance from channel to case is 0.625 °C/W.
This electrostatic-sensitive device comes in a package weighing approximately 9.75 g.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 1000 V.
The typical drain-source ON resistance is 0.8 Ω.
The typical forward transfer admittance is 6.0 S.
The maximum continuous drain current is 12 A.
The maximum power dissipation is 200 W at 25°C (Tc).
The typical input capacitance is 2000 pF.
The typical output capacitance is 360 pF.