| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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891 pcs
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891 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
|
10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK1358 from Toshiba is an N-Channel MOSFET transistor designed for various electronic applications. This component offers a high drain-source voltage rating of 900V and can handle a maximum power dissipation of 150W, making it suitable for power switching applications.
With a typical drain-source resistance of 1.4Ω, the 2SK1358 is a 3-terminal device. Its maximum operating temperature is rated at 150°C, ensuring reliable performance under demanding conditions. The component is identified by its part number 2SK1358 and is manufactured by Toshiba.
This MOSFET is part of the broader category of discrete semiconductor products, specifically within transistors. Its specifications suggest utility in power supply circuits, motor control, and other areas requiring robust voltage and power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2SK1358 is 900V.
The 2SK1358 transistor has a maximum power dissipation of 150W.
The maximum operating temperature for the 2SK1358 is 150°C.
The typical drain-source resistance of the 2SK1358 is 1.4Ω.