SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK1357 is an N-Channel MOSFET transistor designed for high voltage, high speed power switching applications. It features a drain-source breakdown voltage (VDSS) of 900V minimum and a continuous drain current (ID) of 5A at 25℃.
Key electrical characteristics include a gate threshold voltage (VGS(th)) ranging from 1.5V to 3.5V and a drain-source on-state resistance (RDS(on)) of 2.5Ω to 2.8Ω at a gate-source voltage of 10V and drain current of 2A. The device exhibits fast switching speeds with rise times as low as 18ns and fall times as low as 12ns.
Absolute maximum ratings include a total power dissipation (Ptot) of 125W at 25℃, a maximum operating junction temperature (Tj) of 150℃, and a storage temperature range from -55℃ to 150℃. Thermal resistance from junction to case (Rth j-c) is 1.0℃/W, and junction to ambient (Rth j-a) is 50℃/W.
The 2SK1357 is housed in a TO-247var package, suitable for through-hole mounting.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (V(BR)DSS) is 900V minimum.
The continuous drain current (ID) is 5A at 25℃.
The gate threshold voltage (VGS(th)) ranges from 1.5V to 3.5V.
The drain-source on-state resistance (RDS(on)) is typically 2.5Ω to 2.8Ω.
The rise time is 18-35ns and the fall time is 12-25ns.
The maximum operating junction temperature (Tj Max.) is 150℃.
The package type is TO-247var.
