| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SK1351 is a power field-effect transistor featuring an N-Channel, Silicon, Metal-oxide Semiconductor FET construction. It is engineered for high voltage, high speed power switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 500V with a gate-source voltage (Vgs) of 0, and a continuous drain current (Id) of 5A at a case temperature of 25℃. The typical on-resistance (Rds(on)) is 1.5ohm.
This MOSFET is suitable for designs requiring robust performance in power switching scenarios. Its characteristics make it a component choice for various power supply and control circuits where high voltage handling is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the 2SK1351 is 500V.
The continuous drain current (Id) for the 2SK1351 is 5A at a case temperature of 25℃.
The typical on-resistance (Rds(on)) for the 2SK1351 is 1.5ohm.
The 2SK1351 is designed for high voltage, high speed power switching applications.