| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SK1341 is a Silicon N-Channel MOS Field-Effect Transistor (FET) designed for high-speed power switching applications. It offers features such as low on-resistance, high-speed switching capability, and low drive current, making it suitable for use in switching regulators and DC-DC converters.
Key electrical characteristics include a drain-to-source voltage (V DSS) of 900V, a continuous drain current (I D) of 6A, and a typical static drain-to-source on-state resistance (R DS(on)) of 2.0 Ω at 3A and 10V VGS. The device also exhibits a typical input capacitance (Ciss) of 980 pF and an output capacitance (Coss) of 400 pF.
The FET is housed in a TO-3P package, designed for through-hole mounting. Its absolute maximum ratings include a channel dissipation (Pch) of 100W at 25°C case temperature and a maximum channel temperature (Tch) of 150°C. Storage temperature ranges from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (V DSS) for the 2SK1341 is 900 V.
The typical static drain-to-source on-state resistance (R DS(on)) is 2.0 Ω.
The 2SK1341 is available in a TO-3P package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.