2SK1341 The Hitachi 2SK1341 is an N-Channel MOS FET designed for high-speed power switching applications. It features low on-resistance and low drive current.
Mfr Part #:

2SK1341

Available from 1 distributors
Mfr Name: Hitachi
Hitachi
The Hitachi 2SK1341 is an N-Channel MOS FET designed for high-speed power switching applications. It features low on-resistance and low drive current.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

2SK1341 Available from 1 distributor

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2SK1341 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Storage Temperature

2SK1341 Description

Short technical summary and product information.

The Hitachi 2SK1341 is a Silicon N-Channel MOS Field-Effect Transistor (FET) designed for high-speed power switching applications. It offers features such as low on-resistance, high-speed switching capability, and low drive current, making it suitable for use in switching regulators and DC-DC converters.

 

Key electrical characteristics include a drain-to-source voltage (V DSS) of 900V, a continuous drain current (I D) of 6A, and a typical static drain-to-source on-state resistance (R DS(on)) of 2.0 Ω at 3A and 10V VGS. The device also exhibits a typical input capacitance (Ciss) of 980 pF and an output capacitance (Coss) of 400 pF.

 

The FET is housed in a TO-3P package, designed for through-hole mounting. Its absolute maximum ratings include a channel dissipation (Pch) of 100W at 25°C case temperature and a maximum channel temperature (Tch) of 150°C. Storage temperature ranges from -55°C to +150°C.

2SK1341 Quick Information

Product Type: MOSFET
Canonical Name: 2SK1341 Silicon N Channel MOS FET
Subcategory: N-Channel

2SK1341 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK1341 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK1341 Features

  • N-Channel Silicon MOS FET.
  • 900V Drain-to-Source Voltage.
  • 6A Continuous Drain Current.
  • Low On-Resistance: 2.0 Ω typical.
  • TO-3P Package for Through-Hole Mounting.

2SK1341 Applications

  • Ideal for high-voltage DC-DC converter designs.
  • Suitable for industrial motor drive inverter stages.
  • Used in resonant load switching power supplies.
  • Applied in high-voltage relay driver circuits.

2SK1341 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the 2SK1341?

The maximum drain-to-source voltage (V DSS) for the 2SK1341 is 900 V.

What is the typical static drain-to-source on-state resistance?

The typical static drain-to-source on-state resistance (R DS(on)) is 2.0 Ω.

What package type is the 2SK1341 available in?

The 2SK1341 is available in a TO-3P package.

What is the RoHS status of the 2SK1341?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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