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2SK1339-E N-Channel MOSFET by Renesas, rated for 900V drain-source voltage and 3A continuous drain current, housed in a TO-3P package.
Mfr Part #:

2SK1339-E

Available from 1 distributors
Mfr Name: Renesas
Renesas
N-Channel MOSFET by Renesas, rated for 900V drain-source voltage and 3A continuous drain current, housed in a TO-3P package.
✓ Total Stock: 1,687 pcs

2SK1339-E Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,687 pcs
On Request
1687 pcs On Request 1 On Request On Request 07+ On Request On Request
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2SK1339-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
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2SK1339-E Description

Short technical summary and product information.

The 2SK1339-E is a high-voltage N-channel MOSFET from Renesas Electronics. It features a drain-source voltage rating of 900V and a continuous drain current of 3A at 25°C ambient temperature. The device has a maximum on-resistance of 7 Ohm at a drain current of 1.5A and gate-source voltage of 10V. Input capacitance is 425 pF maximum at 10V drain-source voltage. The gate-source voltage is rated at ±30V maximum, with a recommended drive voltage of 10V for optimal on-resistance.

 

Power dissipation is rated at 80W maximum at a case temperature of 25°C. The junction operating temperature is up to 150°C. The MOSFET is through-hole mounted, available in a TO-220-3 Full Pack package with a supplier device package of TO-3P. This package provides good thermal management for high-power applications.

 

Designed for high-voltage switching applications, the 2SK1339-E is suitable for power supplies, inverters, and motor control circuits. Its low on-resistance and high voltage rating make it efficient for power conversion and management. The device is manufactured with MOSFET technology, ensuring reliable performance in demanding environments.

2SK1339-E Quick Information

Product Type: MOSFET
Series: 2SK1339
Canonical Name: 2SK1339-E N-Channel MOSFET 900V 3A
Subcategory: N-Channel MOSFET

2SK1339-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SK1339-E Features

  • 900V drain-source voltage rating.
  • 3A continuous drain current.
  • Low on-resistance of 7 Ohm.
  • Through-hole TO-3P package.
  • High 80W power dissipation.

2SK1339-E Applications

  • High-voltage switching circuits.
  • Power management in industrial equipment.
  • Motor control applications.
  • Inverter and converter designs.

2SK1339-E FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2SK1339-E?

The drain-source voltage (Vdss) is 900V.

What is the continuous drain current rating?

The continuous drain current is 3A at 25°C ambient temperature.

What is the operating temperature range?

The maximum junction operating temperature is 150°C.

What package type is the 2SK1339-E available in?

It is available in a TO-3P package (TO-220-3 Full Pack) for through-hole mounting.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±30V.

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