2SK1317 The Hitachi 2SK1317 is an N-Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V and a TO-3P package.
Mfr Part #:

2SK1317

Available from 1 distributors
Mfr Name: Hitachi
Hitachi
The Hitachi 2SK1317 is an N-Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V and a TO-3P package.
✓ Total Stock: 4 pcs
$ Price Range: $0.99

2SK1317 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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4 pcs
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2SK1317 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Storage Temperature

2SK1317 Description

Short technical summary and product information.

The Hitachi 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It offers a high breakdown voltage of 1500V and a low drive current, making it suitable for various power conversion circuits.

 

Key electrical characteristics include a drain-to-source voltage (V DSS) of 1500V, a continuous drain current (I D) of 2.5A, and a drain peak current (I D(pulse)) of 7A. The static drain-to-source on-state resistance (RDS(on)) is typically 9 Ω at 2A and 15V gate-source voltage. The device also features a gate-to-source cutoff voltage (V GS(off)) ranging from 2.0V to 4.0V.

 

This MOS FET is housed in a TO-3P package, suitable for through-hole mounting. Its features like high breakdown voltage, high-speed switching, and no secondary breakdown make it a reliable choice for applications such as switching regulators, DC-DC converters, and motor drivers.

2SK1317 Quick Information

Product Type: N Channel MOS FET
Canonical Name: 2SK1317 Silicon N Channel MOS FET
Subcategory: N-Channel

2SK1317 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK1317 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK1317 Features

  • High breakdown voltage of 1500V.
  • Suitable for high-speed switching.
  • Low drive current capability.
  • Packaged in a TO-3P.
  • No secondary breakdown.

2SK1317 Applications

  • High-voltage DC-DC converter switching stages.
  • Industrial motor drive inverter circuits.
  • Resonant tank switching in induction heaters.
  • High-voltage relay driver and isolation circuits.
  • Pulse power supply and spark ignition systems.

2SK1317 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage rating?

1500 V

Which package style is used for this component?

TO-3P through-hole mounting

What is the maximum allowable channel temperature?

150 °C

What is the typical static drain-to-source on-state resistance?

9 to 12 Ω at 2 A drain current and 15 V gate-source voltage

What are the switching time characteristics?

Turn-on delay is 17 ns with a 70 ns rise time; turn-off delay is 110 ns with a 60 ns fall time

How does the integrated body diode perform?

It exhibits a forward voltage of 0.9 V and a reverse recovery time of 1750 ns

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