| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Storage Temperature |
The Hitachi 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It offers a high breakdown voltage of 1500V and a low drive current, making it suitable for various power conversion circuits.
Key electrical characteristics include a drain-to-source voltage (V DSS) of 1500V, a continuous drain current (I D) of 2.5A, and a drain peak current (I D(pulse)) of 7A. The static drain-to-source on-state resistance (RDS(on)) is typically 9 Ω at 2A and 15V gate-source voltage. The device also features a gate-to-source cutoff voltage (V GS(off)) ranging from 2.0V to 4.0V.
This MOS FET is housed in a TO-3P package, suitable for through-hole mounting. Its features like high breakdown voltage, high-speed switching, and no secondary breakdown make it a reliable choice for applications such as switching regulators, DC-DC converters, and motor drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1500 V
TO-3P through-hole mounting
150 °C
9 to 12 Ω at 2 A drain current and 15 V gate-source voltage
Turn-on delay is 17 ns with a 70 ns rise time; turn-off delay is 110 ns with a 60 ns fall time
It exhibits a forward voltage of 0.9 V and a reverse recovery time of 1750 ns