PDTC144ET-QR
Nexperia USA Inc.
The PDTC144ET-QR is an RF Diode from Nexperia USA Inc. It features RoHS3 compliance and an MSL 1 rating.
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2,146 pcs
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2146 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
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| Tape & Reel |
The Renesas 2SK1170 is a high-performance N-channel single power MOSFET. It is designed to handle significant power with a maximum drain-source voltage of 500V and a continuous drain current of 20A. The MOSFET exhibits a low on-resistance of 270 mOhm at a Vgs of 10V and Id of 10A, contributing to efficient power transfer and reduced heat generation.
Packaged in the industry-standard TO-3P case, this component is suitable for through-hole mounting, facilitating integration into various electronic circuits. Its specifications make it a viable option for power supply circuits, motor control, and other applications requiring robust switching capabilities.
As a power MOSFET, the 2SK1170 is characterized by its fast switching speeds and high input impedance, enabling efficient operation in demanding environments. The device's construction and electrical characteristics are optimized for reliability and performance in power electronics designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2SK1170 is 500V.
The 2SK1170 has a continuous drain current rating of 20A.
The drain-source on-resistance of the 2SK1170 is 270 mOhm when Vgs is 10V and Id is 10A.
The 2SK1170 is available in a TO-3P package.
