| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Storage Temperature | |
| Tape & Reel | |
| Weight |
The Hitachi 2SK1162 is a Silicon N-Channel MOS FET specifically engineered for high-speed power switching applications. It offers a low on-resistance of typically 0.7 Ω at 5A and 10V VGS, and a low drive current, making it suitable for switching regulator and DC-DC converter designs.
Key electrical characteristics include a drain-to-source breakdown voltage of 500V (V DSS) and a continuous drain current (ID) of 10A. The device also features fast switching times with a typical turn-on delay of 15ns and a fall time of 45ns.
Packaged in a TO-3P case, the 2SK1162 is designed for efficient power dissipation with a channel dissipation (Pch) of 100W at 25°C case temperature. Its operating temperature range is up to 150°C.
This FET is suitable for applications requiring efficient power conversion and high-speed switching, such as power supplies and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage for the 2SK1162 is 500 V.
The typical static drain-to-source on-state resistance is 0.7 Ω.
The 2SK1162 comes in a TO-3P package.
The maximum channel temperature is 150 °C.
The RoHS status is RoHS3 Compliant.