| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SK1094 is a Silicon N-Channel MOS Field-Effect Transistor (FET) suitable for high-speed power switching applications. It features a low on-resistance, rated at a typical 0.055 Ω at 8A drain current and 10V gate-source voltage, and can also be driven with a 4V gate drive.
Key electrical characteristics include a drain-to-source breakdown voltage (V DSS) of 60V and a continuous drain current (I D) of 15A. The device offers high-speed switching capabilities with typical turn-on delay times of 10ns and fall times of 120ns.
Applications for the 2SK1094 include motor drives, DC-DC converters, power switches, and solenoid drives. It is housed in a TO-220FM package, suitable for through-hole mounting.
Absolute maximum ratings include a channel dissipation of 25W and a maximum channel temperature of 150°C. Storage temperature ranges from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (V DSS) for the 2SK1094 is 60V.
The continuous drain current (I D) for the 2SK1094 is 15A.
The typical static drain-to-source on-state resistance (R DS(on)) is 0.055 Ω when the drain current is 8A and the gate-source voltage is 10V.
The 2SK1094 is available in the TO-220FM package.
The 2SK1094 is suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.