| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The 2SK1082 is an N-Channel Silicon Power MOS-FET manufactured by Inchange Semiconductor. This component is designed for general applications and offers a breakdown voltage of 900V.
Key electrical specifications include a minimum drain-source resistance of 2.8Ω and a maximum power dissipation of 125W. It has 3 terminals.
The product is not designed for use in equipment requiring specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, the aerospace industry, or the medical field. The information provided is intended as a guide for product applications.
This component is suitable for various electronic designs where its specific voltage and power ratings are beneficial. Its construction and specifications make it a component for consideration in non-critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK1082 is 900V.
The maximum power dissipation for the 2SK1082 is 125W.
The minimum drain-source resistance of the 2SK1082 is 2.8Ω.
The 2SK1082 has 3 terminals.
