2SK1081

The 2SK1081 is an N-Channel MOSFET Transistor manufactured by Inchange Semiconductor, suitable for high voltage and high speed power switching applications. It features a Drain-Source Voltage (V DSS) of 800V and a continuous Drain Current (ID) of 7A at 25℃.

Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 2.5V to 5.0V and a Drain-Source On-stage Resistance (RDS(on)) between 1.7Ω and 2.2Ω at a gate voltage of 10V and drain current of 3A. The device also specifies switching times, with rise times between 110ns and 170ns, turn-on times from 145ns to 225ns, fall times of 100ns to 150ns, and turn-off times ranging from 250ns to 380ns.

Thermal performance is supported by a maximum Total Dissipation (Ptot) of 125W at 25℃, a maximum Operating Junction Temperature (Tj Max.) of 150℃, and a Storage Temperature Range (Tstg) from -55℃ to 150℃. Thermal resistance values are 1.0℃/W for Junction to Case (Rth j-c) and 35℃/W for Junction to Ambient (Rth j-a).

The transistor has 3 terminals. The product information states that the products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.