| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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212,706 pcs
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212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SK1070PIDTL-E is a silicon N-Channel Junction FET designed for low frequency and high frequency amplifier applications. It offers a maximum drain current of 50 mA and a maximum gate-to-source voltage of 22 V. The device features a typical forward transfer admittance of 30 mS and a typical input capacitance of 9 pF at 5 V. The JFET is available in a surface-mount 3-MPAK package (TO-236-3 / SC-59 / SOT-23-3 compatible). Operating temperature range is up to 150 °C with a maximum channel power dissipation of 150 mW.
50 mA.
Maximum -22 V.
Typical 9 pF at Vds=5V, Vgs=0, f=1MHz.
Surface mount 3-MPAK (TO-236-3, SC-59, SOT-23-3).
Maximum channel temperature 150 °C, storage temperature -55 to +150 °C.