| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,630 pcs
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4630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Renesas 2SK105 is a silicon junction field-effect transistor (JFET) suitable for general-purpose amplification and switching applications. It offers a breakdown voltage gate-source (zero gate current) of 50V minimum and a gate-source leakage current of 1nA maximum under specified conditions.
Key electrical characteristics include a drain current (zero gate voltage) ranging from 0.6mA to 6.5mA and a forward transconductance typically measuring 2.0mS. Input capacitance (Ciss) is typically 4.0pF, and reverse transfer capacitance (Crss) is typically 1.2pF.
The transistor is housed in a TO-226AA package, designed for through-hole mounting. This component is part of the JFET family, offering specific advantages in impedance and noise characteristics for certain circuit designs.
Environmental compliance data indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage gate-source (zero gate current) for the 2SK105 is a minimum of 50V.
The maximum gate-source leakage current (IGSS) is 1nA when VGS is -20V.
The drain current at zero gate voltage (IDSS) for the 2SK105 is typically between 0.6mA and 6.5mA when VDS is 15V.
The 2SK105 comes in a TO-226AA package.