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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FEC 2SK1010 is a power MOSFET transistor belonging to the N-Channel Silicon Metal-oxide Semiconductor FET family. It is designed for applications requiring a high breakdown voltage and moderate current handling capabilities.
Key electrical specifications include a Drain-Source Voltage of 600V, a continuous Drain Current (Id) of 6A at 25°C, and an On-Resistance of 1.6 ohms. These parameters make it suitable for switching and amplification tasks in power electronics circuits.
The device is manufactured by FEC (Fuji Electric) and is part of the broader category of discrete semiconductor products, specifically within transistors, FETs, and MOSFETs.
While specific packaging and mounting details are not provided in the available data, this component is generally used in through-hole or surface-mount configurations depending on the specific package type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 600V.
The continuous drain current is 6A at 25°C.
The on-resistance is 1.6 ohms.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.