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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SJ77 is a Silicon P-Channel MOS Field-Effect Transistor (FET) designed for applications such as high frequency and low frequency power amplification, and high-speed power switching. It is a complementary pair to the 2SK series.
Key electrical specifications include a maximum drain-to-source voltage (Vdsx) of -160V and a continuous drain current (Id) of -500mA. The device offers a maximum channel dissipation (Pch) of 1.75W at 25°C, with a higher rating of 30W at 25°C case temperature. The gate-to-source voltage (Vgs) is rated at -15V, and the gate-to-source on-voltage (Vgs(on)) is specified between -0.2V and -1.5V under test conditions.
This FET exhibits a typical forward transfer admittance (|yfs|) of 3mS at -10mA drain current and -20V drain-to-source voltage. Input capacitance (Ciss) is typically 120pF, and reverse transfer capacitance (Crss) is typically 4.8pF, measured at 1MHz.
The 2SJ77 comes in a TO-220AB package and is suitable for direct mounting. Its operating temperature range is from -45°C to +150°C. This component is designed for reliable performance in demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdsx) for the 2SJ77 is -160V.
The continuous drain current (Id) for the 2SJ77 is -500mA.
The 2SJ77 comes in a TO-220AB package.
The maximum channel dissipation (Pch) for the 2SJ77 is 1.75W.
The operating temperature range for the 2SJ77 is -45°C to +150°C.
The input capacitance (Ciss) of the 2SJ77 is typically 120pF at 1MHz.