2SJ687-ZK-E1-AY P-Channel MOSFET from Renesas with 20V drain-source voltage and 20A continuous drain current. Features low 7mOhm on-resistance and surface-mount TO-252 package.
Mfr Part #:

2SJ687-ZK-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
P-Channel MOSFET from Renesas with 20V drain-source voltage and 20A continuous drain current. Features low 7mOhm on-resistance and surface-mount TO-252 package.
✓ Total Stock: 2,380 pcs
$ Price Range: $1.24 - $3.62

2SJ687-ZK-E1-AY Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,380 pcs
2380 pcs On Request 1 On Request On Request 1337+ On Request On Request

2SJ687-ZK-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

2SJ687-ZK-E1-AY Description

Short technical summary and product information.

The 2SJ687-ZK-E1-AY is a P-Channel MOSFET from Renesas designed for power switching applications. It offers a maximum drain-to-source voltage of 20V and a continuous drain current of 20A at Tc=25°C. The device features a low maximum on-resistance of 7mOhm at Id=10A and Vgs=4.5V, enabling efficient power handling.

 

This MOSFET supports gate drive voltages from 2.5V to 4.5V, making it suitable for low-voltage logic-level control. It has a maximum gate charge of 57nC at Vgs=4.5V and input capacitance of 4400pF at Vds=10V, providing predictable switching performance. The maximum power dissipation is 1W at ambient temperature and 36W at case temperature.

 

The device is housed in a TO-252-3 (DPak) surface-mount package with supplier device package designation TO-252 (MP-3ZK). It operates at junction temperatures up to 150°C. The maximum gate-source voltage is ±12V.

 

Typical applications include load switching, power management, and DC-DC converter circuits where P-Channel MOSFETs are preferred for high-side switching. The surface-mount package supports automated assembly processes.

2SJ687-ZK-E1-AY Quick Information

Product Type: MOSFET
Series: 2SJ687
Canonical Name: P-Channel MOSFET, 20V, 20A, TO-252
Subcategory: Single P-Channel MOSFET

2SJ687-ZK-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SJ687-ZK-E1-AY Estimated Pricing

Qty Low High
1+ $3.62 $3.62
10+ $2.37 $2.37
100+ $1.65 $1.65
500+ $1.34 $1.34
1,000+ $1.33 $1.33
2,500+ $1.24 $1.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SJ687-ZK-E1-AY Features

  • P-Channel MOSFET with 20V drain-source rating.
  • 20A continuous drain current at 25°C case.
  • Low 7mOhm on-resistance at 10A, 4.5V.
  • Surface-mount TO-252 package for automated assembly.
  • Supports 2.5V to 4.5V gate drive voltages.

2SJ687-ZK-E1-AY Applications

  • Suitable for high-side load switching circuits.
  • Used in power management and DC-DC converters.
  • Ideal for battery-powered portable device applications.
  • Applicable in low-voltage motor control circuits.

2SJ687-ZK-E1-AY FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the 2SJ687-ZK-E1-AY?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 7mOhm at Id=10A and Vgs=4.5V.

What package is the 2SJ687-ZK-E1-AY available in?

It is available in TO-252-3 (DPak) surface-mount package, with supplier device package TO-252 (MP-3ZK).

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the maximum power dissipation?

Maximum power dissipation is 1W at ambient temperature (Ta=25°C) and 36W at case temperature (Tc=25°C).

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±12V.

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