2SJ668(TE16L1,NQ) Toshiba 2SJ668 is a P-Channel MOSFET rated for 60V drain-source voltage and 5A continuous drain current. It features low on-resistance of 0.12Ω typical and is housed in a surface-mount TO-252-3 package.
Mfr Part #:

2SJ668(TE16L1,NQ)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
Toshiba 2SJ668 is a P-Channel MOSFET rated for 60V drain-source voltage and 5A continuous drain current. It features low on-resistance of 0.12Ω typical and is housed in a surface-mount TO-252-3 package.
✓ Total Stock: 88 pcs

2SJ668(TE16L1,NQ) Available from 1 distributor

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2SJ668(TE16L1,NQ) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2SJ668(TE16L1,NQ) Description

Short technical summary and product information.

The Toshiba 2SJ668 is a P-Channel MOSFET fabricated with U-MOSIII technology, designed for relay drive, DC/DC converter, and motor drive applications. It offers a drain-source voltage rating of -60V and a continuous drain current of -5A at case temperature 25°C. The device features a low typical drain-source on-resistance of 0.12Ω at VGS=-10V and ID=-2.5A, with a maximum of 0.17Ω. Gate threshold voltage ranges from -0.8V to -2.0V at VDS=-10V and ID=-1mA. The MOSFET is capable of handling single pulse avalanche energy up to 40.5mJ and repetitive avalanche energy of 2mJ. Input capacitance is 700pF typical, output capacitance 90pF, and reverse transfer capacitance 60pF at VDS=-10V. Maximum power dissipation is 20W at case temperature 25°C, with a channel-to-case thermal resistance of 6.25°C/W. The device is housed in a surface-mount TO-252-3 (DPak) package with PW-MOLD supplier package designation. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).

2SJ668(TE16L1,NQ) Quick Information

Product Type: P-Channel MOSFET
Series: U-MOSIII
Canonical Name: Toshiba 2SJ668 P-Channel MOSFET, 60V, 5A, TO-252-3 Package
Subcategory: Single MOSFET

2SJ668(TE16L1,NQ) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SJ668(TE16L1,NQ) Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Low on-resistance of 0.12Ω typical.
  • Gate threshold voltage -0.8V to -2.0V.
  • Surface-mount TO-252-3 package.
  • Avalanche energy rating 40.5 mJ.

2SJ668(TE16L1,NQ) Applications

  • Ideal for relay drive circuits.
  • Suitable for DC/DC converters.
  • Used in motor drive applications.

2SJ668(TE16L1,NQ) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is -60V.

What is the maximum continuous drain current?

The maximum continuous drain current is -5A at case temperature 25°C.

What is the typical drain-source on-resistance?

The typical on-resistance is 0.12Ω at VGS=-10V and ID=-2.5A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from -0.8V to -2.0V at VDS=-10V and ID=-1mA.

What package is this MOSFET available in?

It is available in a surface-mount TO-252-3 (DPak) package with PW-MOLD supplier package.

What is the operating temperature range?

The channel temperature maximum is 150°C, and storage temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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