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2SJ661-DL-1E The 2SJ661-DL-1E is a P-Channel Power MOSFET from ON Semiconductor with a drain-to-source voltage of 60V and continuous drain current of 38A. It features low on-resistance of 29.5mΩ typical and is housed in a surface-mount TO-263-2L package.
Mfr Part #:

2SJ661-DL-1E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2SJ661-DL-1E is a P-Channel Power MOSFET from ON Semiconductor with a drain-to-source voltage of 60V and continuous drain current of 38A. It features low on-resistance of 29.5mΩ typical and is housed in a surface-mount TO-263-2L package.
✓ Total Stock: 20,667 pcs
$ Price Range: $1.60

2SJ661-DL-1E Available from 1 distributor

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20,667 pcs
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2SJ661-DL-1E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
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2SJ661-DL-1E Description

Short technical summary and product information.

The 2SJ661-DL-1E is a P-Channel Power MOSFET designed for high-current switching applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 38A at 25°C ambient, with a pulsed current capability of 152A. The device features a low typical on-resistance of 29.5mΩ at VGS=-10V and ID=-19A, and 40mΩ typical at VGS=-4V, enabling efficient power handling.

 

With an input capacitance of 4360pF typical and a maximum gate charge of 80nC, the MOSFET is well-suited for moderate-speed switching. Switching characteristics include a turn-on delay of 33ns, rise time of 285ns, turn-off delay of 295ns, and fall time of 195ns. The device also has a single-pulse avalanche energy rating of 250mJ.

 

The 2SJ661-DL-1E is packaged in a surface-mount TO-263-2L (D²Pak, SC-83) package with gull-wing terminations, suitable for automated assembly. It has a maximum power dissipation of 65W at case temperature 25°C and an operating junction temperature range of -55°C to +150°C. The standard packing quantity is 800 pieces per reel.

2SJ661-DL-1E Quick Information

Product Type: Power MOSFET
Canonical Name: 2SJ661-DL-1E P-Channel Power MOSFET
Subcategory: Single P-Channel

2SJ661-DL-1E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SJ661-DL-1E Estimated Pricing

Qty Low High
800+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SJ661-DL-1E Features

  • P-Channel power MOSFET with 60V drain-to-source voltage.
  • Continuous drain current rating of 38A at 25°C.
  • Low typical on-resistance of 29.5 milliohms at 10V drive.
  • Surface-mount TO-263-2L (D²Pak) package for easy assembly.
  • Avalanche energy rating of 250mJ for robust operation.

2SJ661-DL-1E Applications

  • Use in high-current load switching and power management circuits.
  • Suitable for DC-DC converters and battery protection applications.
  • Ideal for automotive and industrial power distribution systems.

2SJ661-DL-1E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the 2SJ661-DL-1E?

The 2SJ661-DL-1E is packaged in a surface-mount TO-263-2L (D²Pak, SC-83) package with gull-wing terminations.

What is the operating temperature range of this MOSFET?

The storage temperature range is -55°C to +150°C, and the maximum junction temperature is 150°C.

Is the 2SJ661-DL-1E RoHS compliant?

The product is listed as RoHS3 compliant, but this information is unverified and has low confidence. Official documentation should be requested.

What is the maximum drain-to-source voltage of the 2SJ661-DL-1E?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the typical on-resistance of this MOSFET?

Typical on-resistance is 29.5mΩ at VGS=-10V and 40mΩ at VGS=-4V, both measured at ID=-19A. Maximum values are 39mΩ and 56mΩ respectively.

What is the gate drive voltage range for the 2SJ661-DL-1E?

The MOSFET supports drive voltages of 4V and 10V, with the best RDS(on) achieved at 10V. Maximum gate-to-source voltage is ±20V.

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