| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,721 pcs
|
2721 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The Renesas 2SJ539 is a P-channel single power MOSFET designed for various applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -10A. The on-state resistance (RDS(on)) is typically 210 mOhm when the gate-source voltage (VGS) is -10V and the drain current (ID) is -5A.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. Its specifications make it a component for power switching and control circuits where P-channel enhancement mode operation is required.
As a power MOSFET, the 2SJ539 is part of Renesas's discrete power semiconductor offerings. The part is identified as obsolete by the manufacturer, indicating it may be nearing end-of-life or is no longer actively produced.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified in the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
-10 A
210 mOhm
TO-220AB