| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,100 pcs
|
5100 pcs | On Request | 1 | On Request | On Request | / | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channels | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Hitachi 2SJ527STR is a P-Channel Single Power MOSFET designed for industrial and consumer applications. This component offers a maximum drain-source voltage (Vds) of -60V and a continuous drain current (Id) of -5A. The on-resistance (Rds(on)) is specified at a maximum of 400mohm at 10V.
This MOSFET is housed in a DPAK(S)/TO-252 package, suitable for surface mounting. It has a typical input capacitance (Ciss) of 220pF and a power dissipation (Pd) of 20W. The device is qualified for industrial use.
Key electrical characteristics include a gate-source voltage (Vgs) of 20V and a gate-source cutoff voltage (Vgs(off)) of -2V. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -60V.
The maximum continuous drain current (Id) is -5A.
The maximum on-resistance at 10V gate drive is 400mOhm; typical is 300mOhm.
The device is available in a DPAK(S)/To-252 surface mount package.
Yes, the device is lead-free.
The maximum power dissipation (Pd) is 20W.
The maximum gate-source cutoff voltage (Vgs(off)) is -2V.