| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,143 pcs
|
129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The Toshiba 2SJ412 is a P-Channel MOSFET semiconductor device. It is housed in a TO-220-3 package and designed for through-hole mounting.
Key electrical specifications include a Drain-Source Voltage rating of 100V and a maximum continuous Drain Current of -16A. The on-state resistance (RDS(on)) is specified at a maximum of 210mΩ under typical test conditions. Input capacitance is 1.1nF, and the device has a rise time of 18ns.
Thermal performance is supported by a maximum power dissipation of 60W and a maximum operating temperature of 150°C. The device is suitable for applications requiring a P-Channel MOSFET with these characteristics.
Environmental compliance includes RoHS3 status, MSL 1 Unlimited, and REACH Unaffected, though these are noted with low confidence due to unverified data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SJ412 has a drain-source voltage rating of 100V.
The 2SJ412 is available in a TO-220-3 through-hole package.
The maximum operating temperature is 150°C.
-16A.
210mΩ at Vgs=-10V, Id=-8A.
60W.