2SJ360(TE12L,F) The Toshiba 2SJ360(TE12L,F) is a P-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-source voltage rating, 1A continuous drain current, and low on-resistance of 730mOhm max.
Mfr Part #:

2SJ360(TE12L,F)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SJ360(TE12L,F) is a P-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-source voltage rating, 1A continuous drain current, and low on-resistance of 730mOhm max.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.33 - $0.43

2SJ360(TE12L,F) Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

2SJ360(TE12L,F) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2SJ360(TE12L,F) Description

Short technical summary and product information.

The Toshiba 2SJ360(TE12L,F) is a P-Channel silicon MOSFET using L2-π-MOSV technology, optimized for high-speed switching applications such as chopper regulators, DC-DC converters, and motor drives. It offers a 4V gate drive capability and low drain-source on-resistance of 0.55Ω (typical) at 500mA and 10V, with a maximum of 730mΩ at the same conditions. The device is rated for a drain-source voltage of -60V and a continuous drain current of -1A at 25°C ambient. It features a low threshold voltage of -0.8 to -2.0V, enabling efficient logic-level switching. The MOSFET is housed in a TO-243AA (PW-MINI) surface-mount package, weighing 0.05g typical. It is rated for a maximum power dissipation of 500mW at 25°C ambient and 1.5W when mounted on a ceramic substrate. The operating junction temperature range is up to 150°C. Typical applications include chopper regulators, DC-DC converters, and motor drive circuits. The device is electrostatic-sensitive and requires proper handling.

2SJ360(TE12L,F) Quick Information

Product Type: P-Channel MOSFET
Canonical Name: 2SJ360(TE12L,F)
Subcategory: Single MOSFET

2SJ360(TE12L,F) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SJ360(TE12L,F) Estimated Pricing

Qty Low High
1,000+ $0.43 $0.43
2,000+ $0.39 $0.39
3,000+ $0.37 $0.37
5,000+ $0.35 $0.35
7,000+ $0.34 $0.34
10,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SJ360(TE12L,F) Features

  • P-Channel MOSFET for high-speed switching.
  • 60V drain-source voltage rating.
  • Low on-resistance of 730mOhm maximum.
  • 4V gate drive for logic-level control.
  • Surface-mount PW-MINI (TO-243AA) package.

2SJ360(TE12L,F) Applications

  • Chopper regulator and DC-DC converter circuits.
  • Motor drive switching applications.
  • High-speed switching power supplies.

2SJ360(TE12L,F) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for the 2SJ360(TE12L,F)?

The 2SJ360(TE12L,F) is housed in a TO-243AA (PW-MINI) surface-mount package.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the 2SJ360(TE12L,F) RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified. Refer to the manufacturer for official compliance documentation.

What is the drain-source voltage rating?

The drain-source voltage rating is -60V.

What is the continuous drain current rating?

The continuous drain current is -1A at 25°C ambient.

What is the gate threshold voltage range?

The gate threshold voltage ranges from -0.8V to -2.0V at -1mA drain current.

What is the on-resistance specification?

The maximum on-resistance is 730mOhm at 500mA and 10V gate drive; typical is 550mOhm at same conditions.

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