| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,910 pcs
|
2910 pcs | On Request | 1 | On Request | On Request | 2013 | On Request | On Request |
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| Manufacturer Name | |
| Channel Type | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Number of Channels |
The 2SJ356-T1-AZ is a P-Channel Power MOSFET from Renesas, designed for automotive and industrial applications. It features a maximum drain-to-source voltage (Vdss) of -60 V and a nominal drain current of -2 A. The device offers a maximum on-resistance of 500 mΩ at Vgs = 10 V and 950 mΩ at Vgs = 4.5 V, with a typical on-resistance of 410 mΩ at Vgs = 10 V / 8 V.
With a typical input capacitance of 270 pF and a total gate charge of 11.6 nC, this MOSFET is suitable for switching applications requiring moderate speed and efficiency. The gate threshold voltage (Vgs(th)) is specified as -2 V maximum.
The device is housed in a surface-mount POMM package measuring 2 x 4 x 1.6 mm with 3 leads. It is supplied on embossed tape with a minimum order quantity of 1000 units. The part is lead-free and rated MSL 1 (unlimited floor life).
| Qty | Low | High |
|---|---|---|
| 252+ | $1.19 | $1.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -60 V.
The nominal drain current is -2 A.
The maximum on-resistance is 500 mΩ at Vgs = 10 V and 950 mΩ at Vgs = 4.5 V. Typical on-resistance is 410 mΩ at Vgs = 10 V / 8 V.
It uses a surface-mount POMM package with dimensions 2 x 4 x 1.6 mm and 3 leads.
Yes, the device is lead-free (Pb-free).
The moisture sensitivity level is MSL 1 (unlimited floor life).