| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,223 pcs
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2223 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Power Dissipation |
The 2SJ334 is a P-Channel JFET manufactured by Toshiba, designed for switching and amplifier applications. It offers a minimum drain-source breakdown voltage of 60V and a maximum power dissipation of 45W, making it suitable for medium-power circuits. The drain-source on-resistance is 60 mOhm minimum at Vgs = -10V and Id = -15A. Switching performance includes a rise time of 20ns and a fall time of 35ns max.
The device is housed in a TO-220NIS through-hole package with 3 terminals, allowing for easy mounting on printed circuit boards or sockets. The operating temperature range spans from -55°C to 150°C, enabling use in harsh environments. While compliance information lists RoHS3, MSL 1, and REACH unaffected, these are unverified and should be confirmed with the manufacturer.
Typical applications include power management, motor control, and general-purpose analog signal switching. For complete design details, refer to the official Toshiba datasheet (not currently linked).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at Id = -1mA, Vgs = 0V.
The minimum on-resistance is 60mOhm at Vgs = -10V, Id = -15A.
The maximum power dissipation is 45W.
The rise time is 20ns.
The maximum fall time is 35ns.
The operating temperature range is -55°C to 150°C.
The 2SJ334 is available in a TO-220NIS through-hole package with 3 terminals.