2SJ201

The Toshiba 2SJ201 is a silicon P-Channel MOS Type Field Effect Transistor, specifically designed for high power amplifier applications. This device boasts a high breakdown voltage of -200V (V DSS) and a significant drain current capability of -12A (I D).

Key electrical characteristics include a typical forward transfer admittance (|Y fs|) of 5.0 S, measured at V DS = -10V and I D = -5A. The transistor also features a typical drain-source saturation voltage (V DS(ON)) of -2.0V at I D = -8A and V GS = -10V. Input capacitance (C iss) is typically 1500 pF, output capacitance (C oss) is 430 pF, and reverse transfer capacitance (C rss) is 230 pF, all measured at 1 MHz.

With a maximum power dissipation (P D) of 150W at 25°C (Tc) and a channel temperature limit (T ch) of 150°C, the 2SJ201 is suitable for demanding applications. It is packaged in the 2-21F1B case and is noted as an electrostatic sensitive device requiring careful handling.

This transistor is complementary to the 2SK1530. Its specifications make it a component for use in general electronics applications, including computer, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances.