2SJ201

The Toshiba 2SJ201 is a Silicon P-Channel MOS Type Field Effect Transistor designed for high power amplifier applications. It features a high breakdown voltage of -200V (V DSS) and a high forward transfer admittance of 5.0 S (typ.) at -10V drain-source voltage and -5A drain current.

Key electrical characteristics include a maximum drain current of -12A and a maximum drain power dissipation of 150W at 25°C case temperature. The device operates within a channel temperature range of 150°C and a storage temperature range of -55°C to 150°C.

Electrical specifications also detail a gate-source voltage range of ±20V, a drain cut-off current of -1.0 mA, and a gate leakage current of ±0.5 µA. The drain-source saturation voltage is typically -2.0V at -8A drain current and -10V gate-source voltage. Input capacitance is 1500 pF, output capacitance is 430 pF, and reverse transfer capacitance is 230 pF, all measured at 1 MHz.

This transistor is complementary to the 2SK1530. It is noted as an electrostatic sensitive device and requires careful handling. The package type is 2-21F1B, with a typical weight of 9.75g. The device is suitable for general electronics applications.