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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SJ197-T1-AZ is a P-Channel enhancement mode MOSFET manufactured by Renesas. It is designed for general purpose switching and power management applications.
Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 1.5A, and a low on-resistance of 1 Ohm (max) at a gate voltage of 10V. The device features a maximum gate threshold voltage of 3V at 1mA drain current and an input capacitance of 220pF at 10V drain-source.
Thermally, the MOSFET can dissipate up to 2W of power and operates at a maximum junction temperature of 150°C. It is housed in a TO-243AA package, also known as SOT-89, which is a surface-mount package suitable for automated assembly. The mounting type is surface mount, making it compatible with modern PCB manufacturing processes.
The maximum drain-source voltage is 60V.
The maximum continuous drain current is 1.5A.
The maximum on-resistance is 1 Ohm at Id=500mA and Vgs=10V.
The maximum operating temperature is 150°C.
It is available in a TO-243AA package, also known as SOT-89, for surface mount.
It is indicated as RoHS3 compliant, but this status is unverified and low confidence.
The maximum gate threshold voltage is 3V at a drain current of 1mA.