| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,595 pcs
|
2595 pcs | On Request | 1 | On Request | On Request | 2008+ | On Request | On Request |
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| Tape & Reel |
The Renesas 2SJ186CYTL-E is a P-Channel single power MOSFET designed for industrial and consumer applications. It features a maximum drain-source voltage (VDSS) of -200V and a continuous drain current (ID) of -0.5A. The typical on-resistance (RDS(ON)) at 10V/8V is 8000mohm, with a maximum of 12000mohm at 10V.
This MOSFET has a gate-source voltage (VGS) rating of 15V and a gate-source cutoff voltage (Vgs(off)) of -4V. Its input capacitance (Ciss) is typically 75pF. The component is built with an integrated Schottky Barrier Diode (SBD).
Packaged in an UPAK/SC-62 case, the 2SJ186CYTL-E is intended for surface mounting. It has a power dissipation rating of 1W and is qualified for industrial use. The part is also noted as being lead-free and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-200V.
-0.5A.
Maximum 12000mOhm at Vgs=10V, typical 8000mOhm at Vgs=10V/8V.
UPAK/SC-62 surface-mount package.
Yes, the configuration is Built-In SBD.
75pF typical.
Industrial and consumer use.