| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Storage Temperature |
The Hitachi 2SJ174 is a Silicon P-Channel MOS FET designed for high-speed power switching applications. It offers low on-resistance and low drive current, making it suitable for motor drives, DC-DC converters, power switches, and solenoid drives.
Key electrical characteristics include a drain-to-source voltage (Vds) of -60V and a continuous drain current (Id) of -20A. The static drain-to-source on-state resistance (Rds(on)) is as low as 0.065 Ohms at a gate-to-source voltage (Vgs) of -10V.
This device comes in a TO-220AB package, suitable for through-hole mounting. Its features make it a versatile component for various power switching needs.
Absolute maximum ratings include a drain-to-source voltage of -60V, gate-to-source voltage of -20V, and a continuous drain current of -20A. The maximum channel dissipation is 75W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
0.065 W
TO-220AB
1850 pF
990 pF
265 pF
15 ns