| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The 2SJ162-E is a P-Channel power MOSFET manufactured by Renesas (formerly NEC). It features a maximum drain-to-source voltage of 160V and continuous drain current of 7A. The device can dissipate up to 100W of power. It is designed for switching and amplification applications requiring high voltage and moderate current in a through-hole package.
The MOSFET operates with a 10V drive voltage and has a maximum gate-source voltage rating of ±15V. The input capacitance is 900pF at Vds=10V. It is housed in a TO-3P-3 (SC-65-3) through-hole package, making it suitable for power circuits where heat dissipation via a heatsink is practical.
The device is specified for operation up to 150°C junction temperature. Mounting type is through hole, which provides robust mechanical attachment for high-reliability applications. The product is RoHS3 compliant, MSL Level 1, and REACH unaffected (unverified).
160V maximum.
7A (at Ta).
TO-3P-3, SC-65-3 through-hole package.
150°C.