| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel | |
| Type |
The 2SD998-O from KEC is an NPN bipolar junction transistor (BJT) housed in a TO-3P package. This component is characterized by its robust electrical specifications, including a maximum collector-emitter voltage of 120V and a continuous collector current rating of 10A. It also boasts a significant power dissipation capability of 80W, making it suitable for applications requiring moderate power handling.
The transistor features a DC current gain (hfe) ranging from 80 to 160, and a minimum transition frequency of 10MHz. The operating and storage junction temperature range is specified from -55°C to +150°C, ensuring reliability across a wide thermal spectrum. Its complementary PNP transistor is the 2SB778-O.
This transistor is often used in power amplification and switching circuits where its voltage and current ratings are beneficial. The TO-3P package is a common through-hole package known for its thermal performance and ease of mounting.
Key electrical parameters include a collector-base voltage of 120V and an emitter-base voltage of 5V. The 2SD998-O is identified by the marking 'D998-O' on its package, sometimes omitting the '2S' prefix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SD998-O is 120 V.
The continuous collector current rating for the 2SD998-O is 10 A.
The collector dissipation for the 2SD998-O is 80 W.
The DC current gain (hfe) for the 2SD998-O ranges from 80 to 160.
The operating and storage junction temperature range for the 2SD998-O is -55 to +150 °C.
The 2SD998-O is supplied in a TO-3P package.