| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Panasonic 2SD966 is an NPN epitaxial planar transistor suitable for low-frequency power amplification and stroboscope applications. It is housed in a TO-92 plastic package.
Key electrical characteristics include a collector-to-base voltage of 40V, a collector-to-emitter voltage of 20V, and an emitter-to-base voltage of 7V. The transistor can handle a continuous collector current of 5A and a peak collector current of 8A. Its collector power dissipation is rated at 1W at 25°C ambient temperature.
The operating temperature range for the 2SD966 is from -55°C to +150°C. The part is described as having a low collector-emitter saturation voltage and satisfactory operation at high efficiency with low-voltage power supplies.
This transistor is part of the NPN Silicon Epitaxial Planar Transistor family. It is subdivided into groups P, Q, and R based on its DC current gain. On special request, different pin configurations can be manufactured.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-base voltage is 40V.
The continuous collector current is 5A.
The collector power dissipation is 1W at 25°C.
The operating temperature range is -55°C to +150°C.
The 2SD966 transistor is supplied in a TO-92 package.