| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD877 is an NPN bipolar junction transistor (BJT) designed for various electronic applications. It offers a maximum collector current rating of 3A and a maximum power dissipation of 25W, making it suitable for moderate power switching and amplification tasks.
With a maximum operating temperature of 175°C, this transistor can perform reliably in demanding environments. Its specifications suggest it is a general-purpose transistor for use in power supply circuits, audio amplifiers, and switching applications where moderate current handling is required.
As an NPN transistor, it requires a positive base current to conduct current from collector to emitter. The specific package type and pinout would be detailed in its datasheet, which is essential for proper integration into circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD877 is 3A.
The maximum power dissipation for the 2SD877 is 25W.
The 2SD877 can operate at a maximum temperature of 175°C.