2SD864K 2SD864K is an NPN triple diffused power transistor from Renesas, rated for 3A collector current and 120V collector-emitter voltage, in a TO-220AB through-hole package.
Mfr Part #:

2SD864K

Available from 1 distributors
Mfr Name: Renesas
Renesas
2SD864K is an NPN triple diffused power transistor from Renesas, rated for 3A collector current and 120V collector-emitter voltage, in a TO-220AB through-hole package.
Total Stock: 2,356 pcs
$ Price Range: $1.83

2SD864K Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,356 pcs
2356 pcs On Request 1 On Request On Request On Request On Request On Request

2SD864K Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current
Collector Cutoff Current
Collector Peak Current
Collector Power Dissipation
Collector-to-Base Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
DC Current Transfer Ratio
Emitter-to-Base Breakdown Voltage
Emitter-to-Base Voltage
Fall Time
Junction Temperature
Mounting Type
T_STG (Minimum/Maximum)
T_stg (Typical @ IC=1.5 A, IB 1=-IB 2=3 mA)
Termination Style
Turn On Time
V_BE(sat) (Maximum @ IC=1.5 A, IB=3 mA)
V_BE(sat) (Maximum @ IC=3 A, IB=30 mA)
V_CE(sat) (Maximum @ IC=1.5 A, IB=3 mA)
V_CE(sat) (Maximum @ IC=3 A, IB=30 mA)

2SD864K Description

Short technical summary and product information.

The 2SD864K is a silicon NPN triple diffused power transistor designed for medium speed and power switching applications. It is the complementary pair to the 2SB765K.

 

Key electrical specifications include a maximum collector current of 3A (6A peak), collector-emitter breakdown voltage of 120V, and a DC current transfer ratio (hFE) ranging from 1000 to 20000 at VCE=3V, IC=1.5A. The device offers low saturation voltages with VCE(sat) typically 1.5V at IC=1.5A and 3.0V at IC=3A.

 

The transistor is housed in a TO-220AB package with through-hole mounting, suitable for PCB assembly. Maximum power dissipation is 30W at case temperature 25°C, with a junction temperature rating of 150°C. Switching times are typical: 0.5µs turn-on, 4.5µs storage time, and 1.1µs fall time.

2SD864K Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SD864K NPN Triple Diffused Power Transistor
Subcategory: Single NPN

2SD864K Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD864K Estimated Pricing

Qty Low High
164+ $1.83 $1.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD864K Features

  • NPN triple diffused power transistor.
  • Rated for 3A collector current, 120V VCEO.
  • High DC current gain: 1000 to 20000.
  • Low saturation voltage: 1.5V at 1.5A.
  • TO-220AB through-hole package.

2SD864K Applications

  • Medium speed power switching circuits.
  • Complementary pair with 2SB765K PNP.
  • General purpose power amplification.
  • Switching regulator and converter stages.

2SD864K FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the 2SD864K?

The maximum collector current (IC) is 3A continuous, with a peak current of 6A.

What is the collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 120V at IC=25mA.

What package is the 2SD864K available in?

The 2SD864K is available in a TO-220AB through-hole package.

What is the operating junction temperature range?

The maximum junction temperature (Tj) is 150°C, and the storage temperature range is -55 to +150°C.

Is the 2SD864K RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified.

What is the DC current gain (hFE) of this transistor?

The DC current transfer ratio (hFE) ranges from 1000 to 20000 at VCE=3V, IC=1.5A.

What is the complementary PNP pair for the 2SD864K?

The complementary PNP pair is the 2SB765K from Renesas.

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