| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Turn Off Time | |
| Turn On Time |
The Panasonic 2SD837 is a silicon NPN Darlington power transistor. It is characterized by a high DC current gain, with a minimum hFE of 1000 at IC=3A. This transistor also features high switching speed.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 60V and a continuous Collector Current (IC) of 4A. The Collector Power Dissipation (PC) is rated at 40W at TC=25℃, with a maximum Junction Temperature (TJ) of 150℃. The operating temperature range is from -55℃ to 150℃.
Applications for the 2SD837 include audio power amplifiers and general purpose power amplifiers. Its robust design and high gain make it suitable for various power handling tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD837 is 60V.
The continuous collector current (IC) for the 2SD837 is 4A.
The maximum power dissipation (PC) for the 2SD837 is 40W at 25°C.
The typical DC current gain (hFE) of the 2SD837 at 3A is 1000.
The 2SD837 is used in audio power amplifiers and general purpose power amplifiers.
The RoHS status of the 2SD837 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SD837 is 1 Unlimited.