| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD797 is an NPN Power Transistor manufactured by EIC Semiconductor Inc. This component is designed for high power amplifier, high power switching, DC-DC converter, and regulator applications.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage of 80V (minimum) and a continuous Collector Current rating of 30A. It also features a high Power Dissipation of 200W at 25℃ case temperature. The transistor operates within a Storage Temperature Range of -65℃ to 175℃.
With a Collector-Emitter Saturation Voltage as low as 0.6V and a DC Current Gain (hFE) ranging from 60 to 200 at 1A, the 2SD797 is suitable for demanding power applications. Its Current-Gain—Bandwidth Product is 1.5 MHz, indicating its capability in switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum Collector-Emitter Breakdown Voltage (V(BR)CEO) for the 2SD797 is 80V.
The maximum continuous Collector Current (IC) for the 2SD797 is 30A.
The maximum Collector Power Dissipation (PC) for the 2SD797 at 25℃ is 200W.
The 2SD797 is used in high power amplifier applications, high power switching applications, DC-DC converter applications, and regulator applications.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.