| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,511 pcs
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4511 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Renesas Electronics 2SD780-T1B is a single NPN bipolar junction transistor (BJT) suitable for various electronic circuits. This component is specified with a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 300mA. Its DC current gain (hFE) is typically 30 at 300mA and 2V.
This transistor is part of the single, pre-biased transistor category, indicating it may have integrated biasing resistors for simplified circuit design. The component is manufactured by Renesas Electronics and is identified by the part number 2SD780-T1B.
While specific packaging and mounting details are not provided, NPN transistors of this type are commonly used in amplification, switching, and signal processing applications. Its specifications suggest suitability for moderate power and signal level tasks in consumer electronics, industrial controls, and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the 2SD780-T1B is 60V.
The 2SD780-T1B has a collector current of 300mA.
The DC electricity gain of the 2SD780-T1B is 30 at 300mA and 2V.
The 2SD780-T1B is an NPN transistor.
The RoHS status for the 2SD780-T1B is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SD780-T1B is 1 Unlimited.