| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SD730 is a single NPN bipolar junction transistor (BJT) belonging to the discrete semiconductor product category. It is manufactured using an epitaxial planar silicon process.
Key electrical specifications include a maximum collector current of 700mA and a collector-emitter voltage rating of 20V. The maximum power dissipation is rated at 600mW, and it can operate at temperatures up to 150°C.
This transistor is designed for through-hole mounting, making it suitable for various electronic circuit applications where discrete components are preferred. Its NPN polarity and specific voltage and current ratings define its use in amplification and switching circuits.
Environmental compliance data indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage of the 2SD730 is 20V.
The maximum collector current for the 2SD730 is 700mA.
The maximum power dissipation of the 2SD730 is 600mW.
The maximum operating temperature of the 2SD730 is 150°C.
The mounting type is inferred as through hole.
RoHS3 compliance status is unverified.