| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SD725 is a silicon NPN bipolar junction transistor (BJT) housed in a TO-3 package. This component is designed for through-hole mounting and offers robust electrical characteristics suitable for various applications.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 600V and a maximum collector current (Ic) of 6A. The maximum collector power dissipation (Pc) is rated at 50W. It also features a minimum forward current transfer ratio (hFE) of 80 and a breakdown voltage of 600V for Vce and 1500V for Vcb.
The operating junction temperature (Tj) can reach up to 150°C, with a maximum operating temperature of 140°C at 5.0V. The transistor has a fall time (tf) of 2µs and a saturation resistance (Rsat) of 1Ω. The power dissipation derating is 400m above 25°C.
This transistor is suitable for applications requiring moderate power switching and amplification. Its TO-3 package facilitates efficient heat dissipation, making it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2SD725 is 600V.
The maximum collector current (Ic) for the 2SD725 is 6A.
The maximum collector power dissipation (Pc) for the 2SD725 is 50W.
The maximum operating junction temperature (Tj) for the 2SD725 is 150°C.
The minimum forward current transfer ratio (hFE) for the 2SD725 is 80.
The 2SD725 transistor is supplied in a TO-3 package.
No, the 2SD725 is not a surface-mount device; it is designed for through-hole mounting.