| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD686 is a silicon NPN Darlington power transistor. It is designed for various switching applications, including hammer drive and pulse motor drive applications, as well as power amplifier applications.
Key electrical characteristics include a high DC current gain (hFE) of 2000 minimum at IC=1A and 1000 minimum at IC=3A. The collector-emitter breakdown voltage (VCEO) is a minimum of 80V, and the collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at IC=3A. The device also features a low collector-emitter saturation voltage and a complement to type 2SB676.
Absolute maximum ratings specify a collector current of 4A continuous and a collector power dissipation of 30W at TC=25℃. The junction temperature is rated up to 150℃, with a storage temperature range of -55℃ to 150℃.
This transistor is suitable for applications requiring high current gain and moderate voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the 2SD686 is 4A.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2SD686 is a minimum of 80V.
The DC current gain (hFE-1) of the 2SD686 is a minimum of 2000 at IC=1A.
The maximum collector-emitter saturation voltage (VCE(sat)) for the 2SD686 is 1.5V at IC=3A and IB=6mA.
The maximum collector power dissipation (PC) for the 2SD686 is 30W at TC=25℃.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.