| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31 pcs
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31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Power Dissipation | |
| Storage Temperature |
The 2SD669AC from Hitachi is an NPN Epitaxial Planar Transistor designed for various applications. It offers a high Collector-Emitter Voltage rating of 180V and a maximum Collector Current of 1.5A.
Key electrical parameters include an Emitter-Base Voltage of 5V and a Power Dissipation of 1W. The transistor operates within a Junction Temperature range of up to 150℃ and has a Storage Temperature range of -55 to +150℃.
Packaged in a TO-126 case, this component is suitable for through-hole mounting. Its specifications make it a versatile choice for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage for the 2SD669AC is 180V.
The maximum Collector Current for the 2SD669AC is 1.5A.
The 2SD669AC comes in a TO-126 package.
The storage temperature range for the 2SD669AC is -55 to +150℃.