| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD667 is a Silicon NPN Transistor from Hitachi Semiconductor, designed for various electronic applications. This component is characterized by its maximum collector current of 1A and a maximum power dissipation of 900mW.
It is housed in a 3-pin package suitable for through-hole mounting. The transistor's specifications make it a suitable choice for signal amplification and switching applications where these electrical parameters are critical.
As a bipolar junction transistor (BJT), the 2SD667 operates based on the principles of semiconductor physics, utilizing the properties of NPN junctions to control current flow. Its design is focused on providing reliable performance within its specified limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD667 is 1A.
The maximum power dissipation for the 2SD667 is 900mW.
The 2SD667 is a Silicon NPN Transistor.
The 2SD667 is available in a 3-pin package.