| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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104 pcs
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104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD649 is a Silicon NPN Power Transistor manufactured by Matsuo Electric Co., LTD. It is designed for demanding applications such as line-operated horizontal deflection output. This transistor features a high Collector-Base Voltage (VCBO) and Collector-Emitter Voltage (VCES) of 1500V (Min), ensuring robust performance in high-voltage environments.
Key electrical characteristics include a continuous collector current (IC) of 3A and a pulse collector current (ICP) of 5A. The power dissipation (PC) is rated at 35W at TC ≤ 90℃. It also offers a minimum DC current gain (hFE) of 4 at IC=3A and VCE=10V, with a typical value of 12. The saturation voltages are VCE(sat) of 7.0V (Max) and VBE(sat) of 1.5V (Max) under specific test conditions.
This component is suitable for through-hole mounting and features solder termination. The junction temperature (TJ) is rated up to 130℃, and the storage temperature range is -65 to 130℃. The 2SD649 is designed for reliability and high breakdown voltage, making it a suitable choice for power applications requiring stable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter voltage (VCES) is 1500V.
The continuous collector current (IC) is 3A.
The collector power dissipation is 35W at a case temperature of 90°C or below.
The maximum junction temperature is 130°C.
The DC current gain is 4 minimum and 12 typical at IC=3A and VCE=10V.
The mounting type is Through Hole.