| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,646 pcs
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2646 pcs | On Request | 1 | On Request | On Request | / | On Request | On Request |
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| Manufacturer Name |
This NPN bipolar junction transistor (BJT) from Panasonic Electronic Components, part number 2SD601A-Q(TX), is designed for general-purpose applications. It features a collector-emitter breakdown voltage of 50V and a minimum DC current gain (hFE) of 160 at 2mA and 10V.
The transistor has a maximum power dissipation of 200mW. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The device is specified as RoHS Compliant and Lead Free.
Its electrical characteristics, including the 50V breakdown voltage and 160 minimum hFE, make it a versatile component for switching and amplification circuits. The SOT-23-3 package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The minimum DC current gain (hFE) is 160 at 2mA and 10V.
The maximum power dissipation is 200mW.
This transistor is supplied in a SOT-23-3 package.
The RoHS status is RoHS Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.