| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD425 is an NPN power transistor, part of a complementary series including PNP types. It is housed in a TO-3 package, suitable for through-hole mounting.
This transistor features a maximum collector-emitter voltage (VCEO) of 140V and a continuous collector current (IC) of 12A. The power dissipation (PD) is rated at 100W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) ranging from 40 to 140 at 2A collector current and 5V VCE, and a transition frequency (fT) of 5 MHz typical at 2A collector current and 5V VCE.
Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of 3V maximum at 7A collector current and 0.7A base current, and a base-on voltage (VBE(on)) of 2.5V maximum at 7A collector current and 5V VCE. The storage temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C.
The 2SD425 is available with options for high-reliability screening and RoHS compliance. Its specifications make it suitable for various power switching and amplification tasks in industrial and general-purpose electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD425 is 140V.
The continuous collector current (IC) for the 2SD425 is 12A.
The collector power dissipation (PD) for the 2SD425 is 100W at a case temperature of 25°C.
The operating junction temperature (TJ) for the 2SD425 is up to 150°C.
The storage temperature range (Tstg) for the 2SD425 is -65°C to 150°C.
The DC current gain (hFE) for the 2SD425 is between 40 and 140 at 5V VCE and 2A IC.
The transition frequency (fT) for the 2SD425 is typically 5 MHz at 5V VCE and 2A IC.