2SD401A The 2SD401A is an NPN power transistor from Sumitomo Electric Industries, designed for general purpose power amplifier and vertical output applications. It features a 150V collector-emitter breakdown voltage and 25W power dissipation.
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2SD401A

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Mfr Name: Sumitomo Electric Industries
Sumitomo Electric Industries
The 2SD401A is an NPN power transistor from Sumitomo Electric Industries, designed for general purpose power amplifier and vertical output applications. It features a 150V collector-emitter breakdown voltage and 25W power dissipation.
✓ Total Stock: 8 pcs
$ Price Range: $0.99

2SD401A Available from 1 distributor

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2SD401A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SD401A Description

Short technical summary and product information.

The 2SD401A is a silicon NPN power transistor manufactured by Sumitomo Electric Industries. It is designed for general-purpose power amplifier and vertical output applications. This transistor offers a collector-emitter breakdown voltage of 150V (minimum) and a continuous collector current of up to 2A.

 

With a maximum power dissipation of 25W at 25℃ (TC), the 2SD401A is suitable for various power handling tasks. It operates within a junction temperature range of -55℃ to 150℃ and has a thermal resistance from junction to case of 5.0℃/W.

 

The transistor is housed in a TO-220 package, commonly used for power applications requiring through-hole mounting. Its electrical characteristics include a collector-emitter saturation voltage of 2.0V (typical at 0.5A/50mA) and a DC current gain (hFE) ranging from 40 to 200 at 0.4A/10V. The current-gain-bandwidth product (fT) is 5MHz (minimum at 0.4A/10V).

 

Complementary to the 2SB546A, the 2SD401A is a reliable component for power amplification circuits.

2SD401A Quick Information

Product Type: NPN Power Transistor
Canonical Name: 2SD401A NPN Power Transistor
Subcategory: NPN

2SD401A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD401A Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD401A Features

  • 150V collector-emitter breakdown voltage.
  • 2A continuous collector current.
  • 25W maximum power dissipation.
  • TO-220 package for through-hole mounting.
  • NPN bipolar junction transistor.

2SD401A Applications

  • Used in power switching circuits
  • Suitable for audio amplification
  • Ideal for high-voltage applications
  • Designed for thermal stability in circuits

2SD401A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SD401A?

The collector-emitter breakdown voltage (VCEO) of the 2SD401A is a minimum of 150V.

What is the maximum continuous collector current for the 2SD401A?

The maximum continuous collector current (IC) for the 2SD401A is 2A.

What is the maximum power dissipation of the 2SD401A?

The maximum power dissipation (PC) for the 2SD401A is 25W at a case temperature of 25℃.

What is the package type for the 2SD401A transistor?

The 2SD401A transistor comes in a TO-220 package.

What is the DC current gain (hFE) range for the 2SD401A?

The DC current gain (hFE) for the 2SD401A is between 40 and 200 when tested at IC=0.4A and VCE=10V.

What is the current-gain-bandwidth product (fT) of the 2SD401A?

The current-gain-bandwidth product (fT) for the 2SD401A is a minimum of 5MHz.

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