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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The 2SD401A is a silicon NPN power transistor manufactured by Sumitomo Electric Industries. It is designed for general-purpose power amplifier and vertical output applications. This transistor offers a collector-emitter breakdown voltage of 150V (minimum) and a continuous collector current of up to 2A.
With a maximum power dissipation of 25W at 25℃ (TC), the 2SD401A is suitable for various power handling tasks. It operates within a junction temperature range of -55℃ to 150℃ and has a thermal resistance from junction to case of 5.0℃/W.
The transistor is housed in a TO-220 package, commonly used for power applications requiring through-hole mounting. Its electrical characteristics include a collector-emitter saturation voltage of 2.0V (typical at 0.5A/50mA) and a DC current gain (hFE) ranging from 40 to 200 at 0.4A/10V. The current-gain-bandwidth product (fT) is 5MHz (minimum at 0.4A/10V).
Complementary to the 2SB546A, the 2SD401A is a reliable component for power amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the 2SD401A is a minimum of 150V.
The maximum continuous collector current (IC) for the 2SD401A is 2A.
The maximum power dissipation (PC) for the 2SD401A is 25W at a case temperature of 25℃.
The 2SD401A transistor comes in a TO-220 package.
The DC current gain (hFE) for the 2SD401A is between 40 and 200 when tested at IC=0.4A and VCE=10V.
The current-gain-bandwidth product (fT) for the 2SD401A is a minimum of 5MHz.