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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,415 pcs
|
2415 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
145 pcs
|
145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
46 pcs
|
46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD2704KT146 is an NPN bipolar junction transistor from ROHM Semiconductor designed for general purpose switching and amplification applications. It offers a maximum collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 300mA, making it suitable for low to medium current circuits. The device is rated for a maximum power dissipation of 200mW.
With a DC current gain (hFE) of 820 minimum at 4mA collector current and 2V collector-emitter voltage, this transistor provides consistent amplification performance. The transition frequency is 35MHz, enabling use in moderate speed switching and signal processing. The maximum Vce saturation voltage is 100mV at 3mA base current and 30mA collector current.
The 2SD2704KT146 is supplied in a surface mount SMT3 package (TO-236-3 / SC-59 / SOT-23-3 compatible) with a maximum junction operating temperature of 150°C. Mounting type is surface mount, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.43 | $0.43 |
| 10+ | $0.27 | $0.27 |
| 100+ | $0.17 | $0.17 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.11 | $0.11 |
| 3,000+ | $0.09 | $0.09 |
| 6,000+ | $0.08 | $0.08 |
| 9,000+ | $0.07 | $0.07 |
| 24,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is an NPN bipolar junction transistor (BJT) designed for general purpose switching and amplification.
The maximum collector-emitter breakdown voltage is 20V and the maximum continuous collector current is 300mA.
The maximum power dissipation is 200mW.
The minimum DC current gain is 820 at a test condition of Ic=4mA, Vce=2V.
It comes in a surface mount SMT3 package, which is compatible with TO-236-3, SC-59, and SOT-23-3 footprints.
The maximum operating junction temperature is 150°C.
Yes, it is listed as RoHS3 Compliant, though this information is unverified.